Navitas Semiconductor has announced that Xiaomi’s latest 90 W GaN charger uses Navitas’ GaNSense Control IC technology.
The charger measures 34 × 45 × 34 mm and weighs 65 grams. It incorporates Navitas’ NV9580 GaNSense Control power IC on the primary side and the NV9701 synchronous rectification controller IC on the secondary side.
The GaNSense Control family integrates fourth-generation GaN power FETs, high-frequency gate drive, system control, and protection functions into a single surface-mount package. This design supports high-density and high-efficiency operation for chargers, adapters, and auxiliary power supplies.
Key engineering features include lossless current sensing, high-voltage start-up capability, and elimination of the VDD inductor, which reduces component count. The system supports transient voltage withstand up to 800 V and operates without creating localized thermal hot spots on the PCB. These capabilities enable reduced size and weight while maintaining electrical efficiency and thermal stability.
