Infineon Technologies AG is introducing a 12 kW reference design for high-performance power supply units (PSUs), specifically designed for AI data centers and server applications. The reference design offers high efficiency and high-power density, and leverages all relevant semiconductor materials: silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). It is aimed at research and development engineers, hardware designers, and developers of power electronics systems.
To achieve high-performance levels, the design leverages advanced power conversion topologies in both the AC/DC and DC/DC power stages. The front-end AC/DC converter features a 3-level flying capacitor interleaved power factor correction (PFC) topology, delivering peak efficiency above 99.0 percent while reducing magnetic component volume. This is achieved by Infineon’s CoolSiC technology, which offers high switching performance and excellent thermal properties. The isolated DC/DC converter features a full-bridge LLC resonant converter and offers peak efficiency above 98.5 percent, enabled by using two planar high-frequency transformers and Infineon’s CoolGaN technology. These architectures, combined with Infineon’s latest wide-bandgap technologies, achieve a power density of up to 113 W/in³.
Another key feature of the 12 kW PSU reference design is the bidirectional energy buffer, which is integrated into the overall power supply topology. This converter enables compliance with hold-up time requirements while significantly reducing capacitance requirements. Furthermore, the energy buffer provides a grid-shaping function, improving system reliability and limiting both fluctuations and the rate of change of power drawn from the grid during transient events.
Learn more about powering AI PSU technology from 3 to 12 kW, and beyond, here.
